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1N957B...1N963B
Vishay Semiconductors
Silicon Z-Diodes
Features
D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ-tolerance 5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions TLx75C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 200 -65...+200 Unit mW mA C C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8"), TL=constant Symbol RthJA Value 300 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.1 Unit V
Rev. A3, 13-Nov-98
1 (3)
1N957B...1N963B
Vishay Semiconductors
Type 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B
VZnom 1) V 6.8 7.5 8.2 9.1 10 11 12
IZT for rzjT mA W 20 < 4.5 20 < 5.5 20 < 6.5 20 < 7.5 20 < 8.5 20 < 9.5 20 < 11.5
rzjk at IZK W mA < 700 1.0 < 700 0.5 < 700 0.5 < 700 0.5 < 700 0.25 < 700 0.25 < 700 0.25
IR at VR mA max V 150 5.2 75 5.7 50 6.2 25 6.9 10 7.6 5 8.4 5 9.1
TK VZ %/K < -0.045 < +0.050 < +0.058 < +0.062 < +0.065 < +0.068 < +0.075
1.)Based on dc measurement at thermal equilibrium; lead length = 9.5mm (3/8"); thermal resistance of heat sink = 30 K/W.
Dimensions in mm
Cathode Identification 0.55 max.
technical drawings according to DIN specifications 94 9366
1.7 max.
Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3g
26 min.
3.9 max.
26 min.
2 (3)
Rev. A3, 13-Nov-98
1N957B...1N963B
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Rev. A3, 13-Nov-98
3 (3)
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